FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode

Fairchild Semiconductor

Description

FDFS2P102 October 2000 FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General .
The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier recti.

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Datasheet Specifications

Part number: FDFS2P102
Manufacturer: Fairchild Semiconductor
File Size: 87.08 KB
Datasheet: FDFS2P102_FairchildSemiconductor.pdf
Description: Integrated P-Channel MOSFET and Schottky Diode

Features

* a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features
* 3.3 A,
* 20 V. RDS(ON) = 0.125 Ω @ VGS =
* 10 V RDS(ON) = 0.200 Ω @ V

Applications

* DC/DC converters Load Switch Motor Drives D D C C A 1 A 2 G S A 8 7 C C S 3 G 4 6 D 5 D Pin 1 A T A=25 oC unless otherwise noted MOSFET Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parame

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FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode Fairchild Semiconductor

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