FDFS2P102 - Integrated P-Channel MOSFET and Schottky Diode

Fairchild Semiconductor

FDFS2P102 Datasheet Preview — Preview of FDFS2P102 PDF

Datasheet Details

Part number	FDFS2P102
Manufacturer	Fairchild ↗ Semiconductor
File Size	87.08 KB
Description	Integrated P-Channel MOSFET and Schottky Diode
Datasheet	FDFS2P102_FairchildSemiconductor.pdf

FDFS2P102 Product details

Description

The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

Features

a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
3.3 A,.
20 V. RDS(ON) = 0.125 Ω @ VGS =.
10 V RDS(ON) = 0.200 Ω @ VGS =.
4.5 V. VF < 0.39 V @ 1 A (TJ = 125 oC). VF < 0.47 V @ 1 A. VF < 0.58 V @ 2 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. Electrically independent Sch.

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Published: Mar 30, 2005 |