FDFS2P102 - Integrated P-Channel MOSFET and Schottky Diode
FDFS2P102 Features
* a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features
* 3.3 A,
* 20 V. RDS(ON) = 0.125 Ω @ VGS =
* 10 V RDS(ON) = 0.200 Ω @ V
