FDFS2P753Z - P-Channel MOSFET and Schottky Diode
* Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A * Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A * VF < 500mV @ 1A VF < 580mV @ 2A * Schottky and MOSFET incorporated into single power surface mount SO-8 package * Electrically independent Schottky and MOSFET p
