* General Description
* Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A
* Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A
* VF < 500mV @ 1A VF < 580mV @ 2A
* Schottky and MOSFET incorporated into single power surface mount SO-8 package
* Electrically independent
FDFS2P753Z Datasheet (497.69 KB)
FDFS2P753Z
Fairchild Semiconductor
497.69 KB
P-channel mosfet and schottky diode.
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
November 2006
FDFS2P753Z tm
Integrated P-Channel PowerTrench® MOSFET and Scho.
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