FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

Description

FDFS2P102A August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General .
The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier.

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Datasheet Specifications

Part number: FDFS2P102A
Manufacturer: Fairchild Semiconductor
File Size: 145.56 KB
Datasheet: FDFS2P102A_FairchildSemiconductor.pdf
Description: Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Features

* a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features
* 3.3 A,
* 20V RDS(ON) = 125 mΩ @ VGS =
* 10 V RDS(ON) = 200 mΩ @ VGS =
* 4

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FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor

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