FDFS2P102A - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

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Datasheet Details

Part number	FDFS2P102A
Manufacturer	Fairchild ↗ Semiconductor
File Size	145.56 KB
Description	Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Datasheet	FDFS2P102A_FairchildSemiconductor.pdf

FDFS2P102A Product details

Description

The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

Features

a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
3.3 A,.
20V RDS(ON) = 125 mΩ @ VGS =.
10 V RDS(ON) = 200 mΩ @ VGS =.
4.5 V.
VF < 0.39 V @ 1 A (TJ = 125°C) VF < 0.47 V @ 1 A VF < 0.58 V @ 2 A.
Schottky and MOSFET incorporated into single power surface mount SO-8 package.
Electrically indepen.

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Published: Mar 30, 2005 |