FDFS6N303 - N-Channel MOSFET
Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package.
The MOSFET and Schottky diode are isolated inside the package.
The general purpose pinout has been chosen to maximize flexibility
FDFS6N303 Features
* 6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V. R DS(ON) = 0.050 Ω @ VGS = 4.5 V. VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. General purpose pinout for design flexibility. Ideal for DC/DC converter applications.
