FDFS6N303 Datasheet - Fairchild Semiconductor

FDFS6N303 N-Channel MOSFET

Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility.

FDFS6N303 Features

* 6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V. R DS(ON) = 0.050 Ω @ VGS = 4.5 V. VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. General purpose pinout for design flexibility. Ideal for DC/DC converter applications.

FDFS6N303_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDFS6N303

Manufacturer:

Fairchild Semiconductor

File Size:

96.19 KB

Description:

N-channel mosfet.

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FDFS6N303 FDFS6N303 N-Channel MOSFET Fairchild Semiconductor

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