FDFS2P103 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

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Datasheet Details

Part number	FDFS2P103
Manufacturer	Fairchild ↗ Semiconductor
File Size	295.83 KB
Description	Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Datasheet	FDFS2P103_FairchildSemiconductor.pdf

FDFS2P103 Product details

Description

The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

Features

a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
5.3 A,.
30V RDS(ON) = 59 mΩ @ VGS =.
10 V RDS(ON) = 92 mΩ @ VGS =.
4.5 V.
VF < 0.52 V @ 1 A (TJ = 125°C) VF < 0.57 V @ 1 A (TJ = 25°C).
Schottky and MOSFET incorporated into single power surface mount SO-8 package.
Electrically independent Sch.

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Published: Mar 30, 2005 |