FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

Description

FDFS2P106A June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General .
The FDFS2P106A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier.

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Datasheet Specifications

Part number: FDFS2P106A
Manufacturer: Fairchild Semiconductor
File Size: 91.38 KB
Datasheet: FDFS2P106A_FairchildSemiconductor.pdf
Description: Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode

Features

* a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features
* 3.0 A,
* 60V RDS(ON) = 110 mΩ @ VGS =
* 10 V RDS(ON) = 140 mΩ @ VGS =
* 4

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FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor

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