FDFS6N754 N-Channel MOSFET and Schottky Diode

Fairchild Semiconductor

Description

Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode August 2014 FDFS6N754 Integrated N-Channel PowerTrench® MOSFET.
The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier.

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Datasheet Specifications

Part number: FDFS6N754
Manufacturer: Fairchild Semiconductor
File Size: 461.50 KB
Datasheet: FDFS6N754_FairchildSemiconductor.pdf
Description: N-Channel MOSFET and Schottky Diode

Features

* Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A
* VF < 0.45V @ 2A VF < 0.28V @ 100mA
* Schottky and MOSFET incorporated into single power surface mount SO-8 package
* Electrically independent Schottky and MOSFET pinout for design

Applications

* DC/DC converters D D C C A1 A2 8C 7C SO-8 Pin 1 G S A A S3 G4 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Parameter (Note 1a) Power Dissipation for Dual Operation PD

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FDFS6N754 N-Channel MOSFET and Schottky Diode Fairchild Semiconductor

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