* Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A
* VF < 0.45V @ 2A VF < 0.28V @ 100mA
* Schottky and MOSFET incorporated into single power surface mount SO-8 package
* Electrically independent Schottky and MOSFET pinout for design
FDFS6N754 Datasheet (461.50 KB)
FDFS6N754
Fairchild Semiconductor
461.50 KB
N-channel mosfet and schottky diode.
Final Datasheet
FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
August 2014
FDFS6N754
Integrated N-Channel PowerTrench® MOSFET.
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