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FDFS6N754 - N-Channel MOSFET and Schottky Diode

Datasheet Summary

Description

The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO8 package.

This device is designed specifically as a single package solution for DC to DC converters.

Features

  • Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A.
  • VF < 0.45V @ 2A VF < 0.28V @ 100mA.
  • Schottky and MOSFET incorporated into single power surface mount SO-8 package.
  • Electrically independent Schottky and MOSFET pinout for design flexibility.
  • Low Gate Charge (Qg = 4nC).
  • Low Miller Charge General.

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Datasheet Details

Part number FDFS6N754
Manufacturer Fairchild Semiconductor
File Size 461.50 KB
Description N-Channel MOSFET and Schottky Diode
Datasheet download datasheet FDFS6N754 Datasheet
Additional preview pages of the FDFS6N754 datasheet.

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Full PDF Text Transcription

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Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode August 2014 FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V, 4A, 56mΩ Features „ Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A „ VF < 0.45V @ 2A VF < 0.28V @ 100mA „ Schottky and MOSFET incorporated into single power surface mount SO-8 package „ Electrically independent Schottky and MOSFET pinout for design flexibility „ Low Gate Charge (Qg = 4nC) „ Low Miller Charge General Description The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO8 package.
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