Datasheet Details
| Part number | FDFS2P102 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 87.08 KB |
| Description | Integrated P-Channel MOSFET and Schottky Diode |
| Datasheet |
 FDFS2P102 Datasheet
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General Description
The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters.
Key Features
- a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
- 3.3 A,.
- 20 V. RDS(ON) = 0.125 Ω @ VGS =.
- 10 V RDS(ON) = 0.200 Ω @ VGS =.
- 4.5 V. VF < 0.39 V @ 1 A (TJ = 125 oC). VF < 0.47 V @ 1 A. VF < 0.58 V @ 2 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. Electrically independent Sch.