FDFS2P102 Datasheet | Fairchild Semiconductor

Description The FDFS2P102 bines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features - - - 3.3 A, - 20 V. RDS(ON) = 0.125 Ω @ VGS = - 10 V RDS(ON) = 0.200 Ω @ VGS = - 4.5 V. VF < 0.39 V @ 1 A (TJ = 125 o C). VF < 0.47 V @ 1 A. VF < 0.58 V @ 2 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. Electrically independent Schottky and MOSFET pinout for design flexibility. - - Applications - - - DC/DC converters Load Switch Motor Drives A 1 A 2 8 7 S 3 G 4 6 D 5 D Pin 1 T A=25 o C unless otherwise noted MOSFET Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings -20 ± 20 (Note 1a) Units -3.3 -20 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1 0.9 -55 to +150 °C T J, T STG Operating and Storage Temperature...