FDFS2P102 Overview
The FDFS2P102 bines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters.
FDFS2P102 Key Features
- 3.3 A, -20 V. RDS(ON) = 0.125 Ω @ VGS = -10 V RDS(ON) = 0.200 Ω @ VGS = -4.5 V