FDFS2P102 - Integrated P-Channel MOSFET and Schottky Diode

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDFS2P102
Manufacturer	Fairchild Semiconductor
File Size	87.08 KB
Description	Integrated P-Channel MOSFET and Schottky Diode
Datasheet	FDFS2P102 Datasheet
Additional preview pages of the FDFS2P102 datasheet.

FDFS2P102 Product details

Description

The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

This device is designed specifically as a single package solution for DC to DC converters.

Features

a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
3.3 A,.
20 V. RDS(ON) = 0.125 Ω @ VGS =.
10 V RDS(ON) = 0.200 Ω @ VGS =.
4.5 V. VF < 0.39 V @ 1 A (TJ = 125 oC). VF < 0.47 V @ 1 A. VF < 0.58 V @ 2 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. Electrically independent Sch.

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Published: Mar 30, 2005 |