FDFS2P103 Datasheet | Fairchild Semiconductor

Description The FDFS2P103 bines the exceptional performance of Fairchild's Power Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features - - 5.3 A, - 30V RDS(ON) = 59 mΩ @ VGS = - 10 V RDS(ON) = 92 mΩ @ VGS = - 4.5 V - VF < 0.52 V @ 1 A (TJ = 125°C) VF < 0.57 V @ 1 A (TJ = 25°C) - Schottky and MOSFET incorporated into single power surface mount SO-8 package - Electrically independent Schottky and MOSFET pinout for design flexibility A 1 A 2 S 3 8 C 7 C 6 D 5 D SO-8 Pin 1 G 4 TA=25o C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter (Note 1a) Ratings - 30 ±25 - 5.3 - 20 2 1.6 1 0.9 Units Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG VRRM IO Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) - 55 to +150 30...