FDFS2P103 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDFS2P103
Manufacturer	Fairchild Semiconductor
File Size	295.83 KB
Description	Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Datasheet	FDFS2P103 Datasheet
Additional preview pages of the FDFS2P103 datasheet.

FDFS2P103 Product details

Description

The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

This device is designed specifically as a single package solution for DC to DC converters.

Features

a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
5.3 A,.
30V RDS(ON) = 59 mΩ @ VGS =.
10 V RDS(ON) = 92 mΩ @ VGS =.
4.5 V.
VF < 0.52 V @ 1 A (TJ = 125°C) VF < 0.57 V @ 1 A (TJ = 25°C).
Schottky and MOSFET incorporated into single power surface mount SO-8 package.
Electrically independent Sch.

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Published: Mar 30, 2005 |