Datasheet Details
| Part number | FDFS2P103 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 295.83 KB |
| Description | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| Datasheet |
 FDFS2P103 Datasheet
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General Description
The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters.
Key Features
- a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
- 5.3 A,.
- 30V RDS(ON) = 59 mΩ @ VGS =.
- 10 V RDS(ON) = 92 mΩ @ VGS =.
- 4.5 V.
- VF < 0.52 V @ 1 A (TJ = 125°C) VF < 0.57 V @ 1 A (TJ = 25°C).
- Schottky and MOSFET incorporated into single power surface mount SO-8 package.
- Electrically independent Sch.