FDFS2P753Z Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 115mΩ at VGS = -10V, ID = -3.0A - Max r DS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A - VF < 500m V @ 1A VF < 580m V @ 2A - Schottky and MOSFET incorporated into single power surface mount SO-8 package - Electrically independent Schottky and MOSFET pinout for design flexibility - Ro HS pliant The FDFS2P753Z bines the exceptional performance of Fairchild's Power Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Application - DC - DC Conversion SO-8 Pin 1 D5 D6 C7 C8 4G 3S 2A 1A MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS PD EAS VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Single Pulse Avalanche Energy Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 2) (Note 1a) Ratings -30 ±25 -3 -16 1.6 6 -20 -2 -55 to +150 Units V V W m J V A °C RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Package Marking and Ordering Information (Note...