FDFS2P102A - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDFS2P102A
Manufacturer	Fairchild Semiconductor
File Size	145.56 KB
Description	Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Datasheet	FDFS2P102A Datasheet
Additional preview pages of the FDFS2P102A datasheet.

Product details

Description

The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

Features

a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
3.3 A,.
20V RDS(ON) = 125 mΩ @ VGS =.
10 V RDS(ON) = 200 mΩ @ VGS =.
4.5 V.
VF < 0.39 V @ 1 A (TJ = 125°C) VF < 0.47 V @ 1 A VF < 0.58 V @ 2 A.
Schottky and MOSFET incorporated into single power surface mount SO-8 package.
Electrically indepen.

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Published: Mar 30, 2005 |