FDFS6N303 Datasheet | Fairchild Semiconductor

Description Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. FETKEY products are particularly suited for switching applications such as DC/DC buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable. Features 6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V. R DS(ON) = 0.050 Ω @ VGS = 4.5 V. VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. General purpose pinout for design flexibility. Ideal for DC/DC converter applications. SOT-23 Super SOTTM-6 Super SOTTM-8 SO-8 SOT-223 SOIC-16 1 2 3 4 8 7 6 5 FS FD 303 6N SO-8 pin 1 MOSFET Maximum Ratings Symbol Parameter TA = 25o C unless otherwise noted FDFS6N303 Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1c) (Note 1a) 30 ±20 6 30 2 1.6 0.9 -55 to 150 TJ,TSTG Operating and Storage Temperature Range TA = 25o C unless otherwise noted °C Schottky Diode Maximum Ratings VRRM IO Repetitive Peak Reverse Voltage Average Forward Current (Note 1a) © 2001 Fairchild Semiconductor Corporation FDFS6N303 Rev. D1 Electrical Characteristics...