Datasheet4U Logo Datasheet4U.com

FDFS6N754 - N-Channel MOSFET and Schottky Diode

General Description

The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO8 package.

This device is designed specifically as a single package solution for DC to DC converters.

Key Features

  • Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A.
  • VF < 0.45V @ 2A VF < 0.28V @ 100mA.
  • Schottky and MOSFET incorporated into single power surface mount SO-8 package.
  • Electrically independent Schottky and MOSFET pinout for design flexibility.
  • Low Gate Charge (Qg = 4nC).
  • Low Miller Charge General.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode August 2014 FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V, 4A, 56mΩ Features „ Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A „ VF < 0.45V @ 2A VF < 0.28V @ 100mA „ Schottky and MOSFET incorporated into single power surface mount SO-8 package „ Electrically independent Schottky and MOSFET pinout for design flexibility „ Low Gate Charge (Qg = 4nC) „ Low Miller Charge General Description The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO8 package.