FDFS6N754 Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 56mΩ at VGS = 0V, ID = 4A Max r DS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A - VF < 0.45V @ 2A VF < 0.28V @ 100m A - Schottky and MOSFET incorporated into single power surface mount SO-8 package - Electrically independent Schottky and MOSFET pinout for design flexibility - Low Gate Charge (Qg = 4n C) - Low Miller Charge General Description The FDFS6N754 bines the exceptional performance of Fairchild's Power Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Applications - DC/DC converters A1 A2 8C 7C SO-8 Pin 1 S3 G4 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Parameter (Note 1a) Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) VRRM IO TJ, TSTG Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Operating and Storage Temperature (Note 1a) 6D 5D Ratings 30 ±20 4 20 2 1.6 30 2 -55 to 150 Units V V V A...