* MOSFET:
* Max rDS(on) = 120mΩ at VGS =
* 4.5V, ID =
* 3.0A
* Max rDS(on) = 160mΩ at VGS =
* 2.5V, ID =
* 2.5A
* Max rDS(on) = 240mΩ at VGS =
* 1.8V, ID =
* 1.0A General Description This device is designed specifically as a single pac
FDFMA2P857 Datasheet (407.86 KB)
FDFMA2P857
Fairchild Semiconductor
407.86 KB
Integrated p-channel powertrench mosfet and schottky diode.
FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
February 2007
FDFMA2P857
Integrated P-Channel PowerTrench® MOSFET and Schott.
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