FDFMA2P857 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

FDFMA2P857 Datasheet Preview — Preview of FDFMA2P857 PDF

Datasheet Details

Part number	FDFMA2P857
Manufacturer	Fairchild ↗ Semiconductor
File Size	407.86 KB
Description	Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Datasheet	FDFMA2P857_FairchildSemiconductor.pdf

FDFMA2P857 Product details

Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.

Features

MOSFET:.
Max rDS(on) = 120mΩ at VGS =.
4.5V, ID =.
3.0A.
Max rDS(on) = 160mΩ at VGS =.
2.5V, ID =.
2.5A.
Max rDS(on) = 240mΩ at VGS =.
1.8V, ID =.
1.0A General.

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Published: May 3, 2007 |