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FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode

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Description

FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode February 2007 FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schott.
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applicatio.

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Datasheet Specifications

Part number
FDFMA2P857
Manufacturer
Fairchild Semiconductor
File Size
407.86 KB
Datasheet
FDFMA2P857_FairchildSemiconductor.pdf
Description
Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Features

* MOSFET:
* Max rDS(on) = 120mΩ at VGS =
* 4.5V, ID =
* 3.0A
* Max rDS(on) = 160mΩ at VGS =
* 2.5V, ID =
* 2.5A
* Max rDS(on) = 240mΩ at VGS =
* 1.8V, ID =

FDFMA2P857 Distributors

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Integrated P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor
Fairchild Semiconductor FDFMA2P857-like datasheet