FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

Description

FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode February 2007 FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schott.
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applicatio.

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Datasheet Specifications

Part number: FDFMA2P857
Manufacturer: Fairchild Semiconductor
File Size: 407.86 KB
Datasheet: FDFMA2P857_FairchildSemiconductor.pdf
Description: Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Features

* MOSFET:
* Max rDS(on) = 120mΩ at VGS =
* 4.5V, ID =
* 3.0A
* Max rDS(on) = 160mΩ at VGS =
* 2.5V, ID =
* 2.5A
* Max rDS(on) = 240mΩ at VGS =
* 1.8V, ID =

FDFMA2P857 Distributors

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FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor

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