FDFMA2P857 Datasheet, Diode, Fairchild Semiconductor

FDFMA2P857 Features

• Diode MOSFET:
• Max rDS(on) = 120mΩ at VGS =
    –4.5V, ID =
    –3.0A
• Max rDS(on) = 160mΩ at VGS =
    –2.5V, ID =
    –2.5A

PDF File Details

Part number:

FDFMA2P857

Manufacturer:

Fairchild Semiconductor

File Size:

407.86kb

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📄 Datasheet

Description:

Integrated p-channel powertrench mosfet and schottky diode. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultrapo

FDFMA2P857 Application

• Applications It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduc

TAGS

FDFMA2P857

Fairchild Semiconductor

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