FDFMA3N109 Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

Description

July 2014 FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General .
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications.

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Datasheet Specifications

Part number: FDFMA3N109
Manufacturer: Fairchild Semiconductor
File Size: 419.70 KB
Datasheet: FDFMA3N109_FairchildSemiconductor.pdf
Description: Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Features

* a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is

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FDFMA3N109 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor

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