FDFMA3N109 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

Datasheet Details

Part number	FDFMA3N109
Manufacturer	Fairchild ↗ Semiconductor
File Size	419.70 KB
Description	Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Datasheet	FDFMA3N109_FairchildSemiconductor.pdf

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications.

a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode.

📁 FDFMA3N109 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Oct 19, 2006 |