* General Description MOSFET
* Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A
* Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A
* HBM ESD protection level > 2kV (Note 3) Schottky
* VF < 0.37V @ 500mA
* Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
FDFMA2N028Z Datasheet (662.11 KB)
FDFMA2N028Z
Fairchild Semiconductor
662.11 KB
Integrated n-channel powertrench mosfet and schottky diode.
FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
July 2014
FDFMA2N028Z
Integrated N-Channel PowerTrench® MOSFET and Schottky D.
📁 Related Datasheet
FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode (Fairchild Semiconductor)
FDFMA2P029Z P-Channel MOSFET (ON Semiconductor)
FDFMA2P029Z-F106 P-Channel MOSFET (ON Semiconductor)
FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode (Fairchild Semiconductor)
FDFMA2P853T Integrated P-Channel MOSFET (Fairchild Semiconductor)
FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode (Fairchild Semiconductor)
FDFMA2P859T Integrated P-Channel PowerTrench MOSFET and Schottky Diode (Fairchild Semiconductor)
FDFMA3N109 Integrated P-Channel PowerTrench MOSFET and Schottky Diode (Fairchild Semiconductor)
FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode (Fairchild Semiconductor)
FDFM2P110 Integrated P-Channel PowerTrench MOSFET and Schottky Diode (Fairchild Semiconductor)
TAGS
Image Gallery
