FDFMA2N028Z Datasheet - Fairchild Semiconductor

FDFMA2N028Z Integrated N-Channel PowerTrench MOSFET and Schottky Diode

MOSFET * Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A * Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A * HBM ESD protection level > 2kV (Note 3) Schottky * VF < 0.37V @ 500mA * Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm * RoHS Compl.

FDFMA2N028Z_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDFMA2N028Z

Manufacturer:

Fairchild Semiconductor

File Size:

662.11 KB

Description:

Integrated n-channel powertrench mosfet and schottky diode.

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