FDFMA2N028Z Datasheet, Diode, Fairchild Semiconductor

FDFMA2N028Z Features

• Diode General Description MOSFET
• Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A
• Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A
• HBM ESD protection level > 2kV (Note 3

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Part number:

FDFMA2N028Z

Manufacturer:

Fairchild Semiconductor

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662.11kb

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📄 Datasheet

Description:

Integrated n-channel powertrench mosfet and schottky diode. MOSFET

Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A

Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A

HBM ESD

FDFMA2N028Z Application

• Applications It features a MOSFET with low on-state resistance, and an independently connected schottky diode with low forward voltage. The MicroFE

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FDFMA2N028Z

Fairchild Semiconductor

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