FDFMA2N028Z - Integrated N-Channel PowerTrench MOSFET and Schottky Diode
MOSFET * Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A * Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A * HBM ESD protection level > 2kV (Note 3) Schottky * VF < 0.37V @ 500mA * Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm * RoHS Compl
