FDFS2P106A - P-Channel MOSFET and Schottky Diode

ON Semiconductor

FDFS2P106A Datasheet Preview — Preview of FDFS2P106A PDF

Datasheet Details

Part number	FDFS2P106A
Manufacturer	ON Semiconductor ↗
File Size	179.19 KB
Description	P-Channel MOSFET and Schottky Diode
Datasheet	FDFS2P106A-ONSemiconductor.pdf

FDFS2P106A Product details

Description

The FDFS2P106A combines the exceptional performance of ON Semiconductor's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

Features

a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
3.0 A,.
60V RDS(ON) = 110 mΩ @ VGS =.
10 V RDS(ON) = 140 mΩ @ VGS =.
4.5 V.
VF < 0.45 V @ 1 A (TJ = 125°C) VF < 0.53 V @ 1 A VF < 0.62 V @ 2 A.
Schottky and MOSFET incorporated into single power surface mount SO-8 package.
Electrically indepen.

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Published: Dec 24, 2023 |