MOSFET, N-Channel, POWERTRENCH) Q1: 30 V, 66 A, 4 .
ON Semiconductor
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FDMD8900 - N-Channel Power MOSFET
MOSFET, N-Channel, POWERTRENCH) Q1: 30 V, 66 A, 4 mW Q2: 30 V, 42 A, 5.5 mW FDMD8900 General Description This devices utilizes two optimized N−ch FET.