FDMD8900 Datasheet, Mosfet, ON Semiconductor

FDMD8900 Features

• Mosfet Q1: N
• Channel
• Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A
• Max rDS(on) = 5 mW at VGS = 4.5 V, ID = 17 A
• Max rDS(on) = 6.5 mW at VGS = 3.8 V, ID = 15

PDF File Details

Part number:

FDMD8900

Manufacturer:

ON Semiconductor ↗

File Size:

447.94kb

Download:

📄 Datasheet

Description:

N-channel power mosfet. This devices utilizes two optimized N

ch FETs in a dual 3.3 x 5 mm thermally enhanced power package. The HS Source and LS dra

FDMD8900 Application

• Applications
• Computing
• Buck, Boost and Buck/Boost Applications
• General Purpose POL www.onsemi.com D1 1 D1 2 D1 3 G2

TAGS

FDMD8900

ON Semiconductor

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