FDMD8900 - N-Channel Power MOSFET

ON Semiconductor

FDMD8900 Datasheet Preview — Preview of FDMD8900 PDF

Datasheet Details

Part number	FDMD8900
Manufacturer	ON Semiconductor ↗
File Size	447.94 KB
Description	N-Channel Power MOSFET
Datasheet	FDMD8900-ONSemiconductor.pdf

FDMD8900 Product details

Description

This devices utilizes two optimized N ch FETs in a dual 3.3 x 5 mm thermally enhanced power package.The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM.

Features

Q1: N.
Channel.
Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A.
Max rDS(on) = 5 mW at VGS = 4.5 V, ID = 17 A.
Max rDS(on) = 6.5 mW at VGS = 3.8 V, ID = 15 A.
Max rDS(on) = 8.3 mW at VGS = 3.5 V, ID = 14 A Q2: N.
Channel.
Max rDS(on) = 5.5 mW at VGS = 10 V, ID = 17 A.
Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A.
Max rDS(on) = 9 mW at VGS = 3.8 V, ID = 13 A.
Max rDS(on) = 12 mW at VGS = 3.5 V, ID = 12 A.

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Published: Jan 23, 2023 |