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FDMD8280 - MOSFET

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FDMD8280 Product details

Description

Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 11 A Max rDS(on) = 11 mΩ at VGS = 8 V, ID = 9.5 A Ideal for flexible layout in primary side of bridge topology Termination is Lead-free and RoHS Compliant 100% UIL tested Kelvin High Side MOSFET drive pin-out capability This device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package.HS source and LS Drain internally connected for half/full bridge, low source inductance p

Features

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