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FDMD82100L - MOSFET

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FDMD82100L Product details

Description

Max rDS(on) = 19.5 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 5.7 A Ideal for flexible layout in primary side of bridge topology Termination is Lead-free and RoHS Compliant 100% UIL tested Kelvin High Side MOSFET drive pin-out capability This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package.HS source and LS Drain internally connected for half/full bridge, low source inductanc

Features

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