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FDM3622 N-Channel MOSFET

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Description

MOSFET * N-Channel, POWERTRENCH) 100 V, 4.4 A, 60 mW FDM3622 General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on. sta.

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Features

* Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A
* Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A
* Low Miller Charge
* Low QRR Body Diode
* Optimized efficiency at high frequencies
* UIS Capability (Single Pulse and Repetitive Pulse)
* This Dev

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ON Semiconductor FDM3622-like datasheet