FDM606P - P-Channel 1.8V Logic Level Power Trench MOSFET

Fairchild Semiconductor

FDM606P Datasheet Preview — Preview of FDM606P PDF

Datasheet Details

Part number	FDM606P
Manufacturer	Fairchild ↗ Semiconductor
File Size	146.19 KB
Description	P-Channel 1.8V Logic Level Power Trench MOSFET
Datasheet	FDM606P_FairchildSemiconductor.pdf

FDM606P Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

Fast switching.
rDS(ON) = 0.026Ω (Typ), VGS = -4.5V.
rDS(ON) = 0.033Ω (Typ), VGS = -2.5V.
rDS(ON) = 0.052Ω (Typ), VGS = -1.8V.

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Published: Jan 27, 2006 |