FDM606P - P-Channel 1.8V Logic Level Power Trench MOSFET
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics application
FDM606P Features
* Fast switching
* rDS(ON) = 0.026Ω (Typ), VGS = -4.5V
* rDS(ON) = 0.033Ω (Typ), VGS = -2.5V
* rDS(ON) = 0.052Ω (Typ), VGS = -1.8V Applications
* Load switch
* Battery charge
* Battery disconnect circuits D Bottomview 3 X 2 (8 Lead) SinglePad
