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FDM606P

P-Channel 1.8V Logic Level Power Trench MOSFET

FDM606P Features

* Fast switching

* rDS(ON) = 0.026Ω (Typ), VGS = -4.5V

* rDS(ON) = 0.033Ω (Typ), VGS = -2.5V

* rDS(ON) = 0.052Ω (Typ), VGS = -1.8V Applications

* Load switch

* Battery charge

* Battery disconnect circuits D Bottomview 3 X 2 (8 Lead) SinglePad

FDM606P General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics application.

FDM606P Datasheet (146.19 KB)

Preview of FDM606P PDF

Datasheet Details

Part number:

FDM606P

Manufacturer:

Fairchild Semiconductor

File Size:

146.19 KB

Description:

P-channel 1.8v logic level power trench mosfet.

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FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET Fairchild Semiconductor

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