FDM606P Datasheet - Fairchild Semiconductor

FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics application.

FDM606P Features

* Fast switching

* rDS(ON) = 0.026Ω (Typ), VGS = -4.5V

* rDS(ON) = 0.033Ω (Typ), VGS = -2.5V

* rDS(ON) = 0.052Ω (Typ), VGS = -1.8V Applications

* Load switch

* Battery charge

* Battery disconnect circuits D Bottomview 3 X 2 (8 Lead) SinglePad

FDM606P_FairchildSemiconductor.pdf

FDM606P Datasheet Preview — Preview of FDM606P PDF

Datasheet Details

Part number:

FDM606P

Manufacturer:

Fairchild Semiconductor

File Size:

146.19 KB

Description:

P-channel 1.8v logic level power trench mosfet.

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TAGS

FDM606P FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET Fairchild Semiconductor

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