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FDM3622

N-Channel PowerTrench MOSFET

FDM3622 Features

* r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanc

FDM3622 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications Distributed Power Architectures and VRMs Primary Swi.

FDM3622 Datasheet (231.19 KB)

Preview of FDM3622 PDF

Datasheet Details

Part number:

FDM3622

Manufacturer:

Fairchild Semiconductor

File Size:

231.19 KB

Description:

N-channel powertrench mosfet.

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FDM3622 N-Channel PowerTrench MOSFET Fairchild Semiconductor

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