FDM3300NZ N-Channel MOSFET

Fairchild Semiconductor

Description

FDM3300NZ February 2003 FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General .
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.

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Datasheet Specifications

Part number: FDM3300NZ
Manufacturer: Fairchild Semiconductor
File Size: 460.53 KB
Datasheet: FDM3300NZ_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 10 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V
* > 2000v ESD Protection
* Low Profile
* 1mm maximum

Applications

* Li-Ion Battery Pack D1 D1 D2 D2 D2 1 2 G2 8 7 6 5 3 4 S1 G1 S2 MicroFET Absolute Maximum Ratings VDSS VGSS ID PD TJ, TSTG TA=25oC unless otherwise noted Symbol Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Power Dissipation (Stead

FDM3300NZ Distributors

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FDM3300NZ N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDM3300NZ-like datasheet