FDMD8430 - Dual N-Channel Power MOSFET
This package integrates two N *Channel devices connected internally in common *source configuration.
This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.
Provides a very small footprint (3.3 x 5 mm) for higher power density.
Featur
FDMD8430 Features
* Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A
* Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A
* Ideal for Flexible Layout in Secondary Side Synchronous Rectification
* 100% UIL Tested
* Termination is Lead
* free and RoHS Compliant Applications
