FDMD8430 Dual N-Channel Power MOSFET

ON Semiconductor

Description

FDMD8430 Dual N-Channel PowerTrench) MOSFET 30 V, 28 A, 2.12 mW General .
This package integrates two N. Channel devices connected internally in common. source configuration.

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Datasheet Specifications

Part number: FDMD8430
Manufacturer: ON Semiconductor ↗
File Size: 403.96 KB
Datasheet: FDMD8430-ONSemiconductor.pdf
Description: Dual N-Channel Power MOSFET

Features

* Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A
* Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A
* Ideal for Flexible Layout in Secondary Side Synchronous Rectification
* 100% UIL Tested
* Termination is Lead

Applications

* Isolated DC
* DC Synchronous Rectifiers
* Common Ground Load Switches www. onsemi. com Top Pin 1 D2 D2 D2 G2 Bottom S1/S2 Pin 1 G1 D1 D1 D1 PQFN8 PowerTrench CASE 483AU G1 1 D1 2 D1 3 D1 4 S1,S2 to backside 8 D2 7 D2 6 D2 5 G2 ORDERING INFORMATION See detailed orderin

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FDMD8430 Dual N-Channel Power MOSFET ON Semiconductor

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