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FDMD8430 - Dual N-Channel Power MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDMD8430
Manufacturer	ON Semiconductor ↗
File Size	403.96 KB
Description	Dual N-Channel Power MOSFET
Datasheet	FDMD8430-ONSemiconductor.pdf

FDMD8430 Product details

Description

This package integrates two N Channel devices connected internally in common source configuration.

Features

Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A.
Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A.
Ideal for Flexible Layout in Secondary Side Synchronous Rectification.
100% UIL Tested.
Termination is Lead.
free and RoHS Compliant.

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Published: Jan 23, 2023 |