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FDMD8430

Dual N-Channel Power MOSFET

FDMD8430 Features

* Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A

* Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A

* Ideal for Flexible Layout in Secondary Side Synchronous Rectification

* 100% UIL Tested

* Termination is Lead

* free and RoHS Compliant Applications

FDMD8430 General Description

This package integrates two N

*Channel devices connected internally in common

*source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density. Featur.

FDMD8430 Datasheet (403.96 KB)

Preview of FDMD8430 PDF

Datasheet Details

Part number:

FDMD8430

Manufacturer:

ON Semiconductor ↗

File Size:

403.96 KB

Description:

Dual n-channel power mosfet.

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FDMD8430 Dual N-Channel Power MOSFET ON Semiconductor

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