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FDMD86100 - MOSFET

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FDMD86100 Product details

Description

Common source configuration to eliminate PCB routing Large source pad on bottom of package for enhanced thermals Shielded Gate MOSFET Technology Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 10 A Max rDS(on) = 17.3 mΩ at VGS = 6 V, ID = 7.8 A Ideal for flexible layout in secondary side synchronous rectification Termination is Lead-free and RoHS Compliant 100% UIL tested This package integrates two N-Channel devices con

Features

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