FDMD86100 - MOSFET
* Common source configuration to eliminate PCB routing * Large source pad on bottom of package for enhanced thermals * Shielded Gate MOSFET Technology * Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 10 A * Max rDS(on) = 17.3 mΩ at VGS = 6 V, ID = 7.8 A *
