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FDMD86100

MOSFET

FDMD86100 Features

* General Description

* Common source configuration to eliminate PCB routing

* Large source pad on bottom of package for enhanced thermals

* Shielded Gate MOSFET Technology

* Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 10 A

* Max rDS(on) = 17.3 mΩ at VGS = 6 V,

FDMD86100 General Description



* Common source configuration to eliminate PCB routing

* Large source pad on bottom of package for enhanced thermals

* Shielded Gate MOSFET Technology

* Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 10 A

* Max rDS(on) = 17.3 mΩ at VGS = 6 V, ID = 7.8 A

* .

FDMD86100 Datasheet (214.27 KB)

Preview of FDMD86100 PDF

Datasheet Details

Part number:

FDMD86100

Manufacturer:

Fairchild Semiconductor

File Size:

214.27 KB

Description:

Mosfet.
FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET February 2015 FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 39 A, 10..

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FDMD86100 MOSFET Fairchild Semiconductor

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