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FDMD84100 MOSFET

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Description

FDMD84100 Dual N-Channel PowerTrench® MOSFET June 2016 FDMD84100 Dual N-Channel PowerTrench® MOSFET 100 V, 21 A, 20 mΩ .
Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A. Max rDS(on) = 32 mΩ at VGS = 6 V, ID = 5. Ideal for flexible layout in s.

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Applications

* Isolated DC-DC Synchronous Rectifiers
* Common Ground Load Switches Top Pin 1 D2 D2 D2 G2 Bottom S1/S2 Power 3.3 x 5 Pin 1 G1 D1 D1 D1 G1 1 D1 2 D1 3 D1 4 S1,S2 to backside 8 D2 7 D2 6 D2 5 G2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS

FDMD84100 Distributors

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