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FDMD84100 - MOSFET

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FDMD84100 Product details

Description

Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 32 mΩ at VGS = 6 V, ID = 5.5 A Ideal for flexible layout in secondary side synchronous rectification This package integrates two N-Channel devices connected internally in common-source configuration.This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.Provides a very small footprint (3.3 x 5 mm) for higher power density. Termination is Lead-

Features

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