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FDMD8280 - MOSFET

General Description

Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 11 A Max rDS(on) = 11 mΩ at VGS = 8 V, ID = 9.5 A Ideal for flexible layout in primary side of bridge topology Termination is Lead-free and RoHS Compliant 100% UIL tested Kelvin High Side MOSFET dri

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDMD8280 Dual N-Channel PowerTrench® MOSFET October 2014 FDMD8280 Dual N-Channel Power Trench® MOSFET 80 V, 40 A, 8.2 mΩ Features General Description „ Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 11 A „ Max rDS(on) = 11 mΩ at VGS = 8 V, ID = 9.5 A „ Ideal for flexible layout in primary side of bridge topology „ Termination is Lead-free and RoHS Compliant „ 100% UIL tested „ Kelvin High Side MOSFET drive pin-out capability This device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.