FDMD85100 Overview
N-Channel Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A Q2: N-Channel Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A Ideal for flexible layout in primary side of bridge topology Termination is Lead-free and RoHS pliant 100% UIL tested Kelvin High Side MOSFET drive pin-out capability This device includes two...
FDMD85100 Key Features
- Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A
- Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A Q2: N-Channel
- Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A
- Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A
- Ideal for flexible layout in primary side of bridge topology
- Termination is Lead-free and RoHS pliant
- 100% UIL tested
- Kelvin High Side MOSFET drive pin-out capability