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FDMD84100 - MOSFET

General Description

Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 32 mΩ at VGS = 6 V, ID = 5.5 A

This package integrates two N-Channel devices connected internally in common-source configuration.

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMD84100 Dual N-Channel PowerTrench® MOSFET June 2016 FDMD84100 Dual N-Channel PowerTrench® MOSFET 100 V, 21 A, 20 mΩ Features General Description „ Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 32 mΩ at VGS = 6 V, ID = 5.5 A „ Ideal for flexible layout in secondary side synchronous rectification This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density. „ Termination is Lead-free and RoHS Compliant „ 100% UIL tested Applications „ Isolated DC-DC Synchronous Rectifiers „ Common Ground Load Switches Top Pin 1 D2 D2 D2 G2 Bottom S1/S2 Power 3.