FDMD8630 - N-Channel MOSFET
FDMD8630 Features
* Common Source Configuration to Eliminate PCB Routing
* Large Source Pad on Bottom of Package for Enhanced Thermals
* Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 38 A
* Max rDS(on) = 1.3 mW at VGS = 4.5 V, ID = 33 A
* Ideal for Flexible Layout in Secondary Side
