FDP047N10 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FDP047N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance:

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FDP047N10 — N-Channel PowerTrench® MOSFET FDP047N10 N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.7 mΩ November 2013 Features • RDS(on) = 3.9 mΩ (T

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