FIN Datasheet | Pinout, Features, Price Comparison & PDF

Machine Translated by Google Shenzhen Fuman Electronics Group Co., Ltd. SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. IC LTH7R. (File No.: S&CIC1

IDP2308 Digital Multi-Mode PFC + LLC Combo Controller Product Highlights  Integrated 600V startup cell  Integrated floating driver based on corele

SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. FM6124 (：S&CIC1501) 16 LED FM6124 LED IC， 16 。FM6124 “ ”，，。FM6124 ， 。 FM6124 ， PCB 。 ， LED 。

NOT RECOOBMSMOENLDEETDEFOPRRNOEDWUDECSTIGNS THE INFINITE POWER OF INNOVATION LM385 / 385B 1.2 & 2.5V MICROPOWER VOLTAGE REFERENCE PRODUCTION DATA SH

IPA70R360P7S MOSFET 700V CoolMOSª P7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the su

FINE MADE ELECTRONICS GROUP CO., LTD. XPD720 USB Type-C PD/PPS Multi Protocol Controller 1 Features  USB PD3.0 Certified（TID：3479）  Support USB T

IPD70R600P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

1  USB Type-A Type-C - - ， 5V - A C ，  - - DCDC - LINK DCDC  USB Type-C  - （XPD911） - (XPD911NA/XPD911NC/XPD911AA)  USB Power

sales.Mr.wang13826508770 www.sztssd.com FINE MADE MICROELECTRONICS GROUP CO., LTD. XPD737(：S&CIC1821) XPD-LINK™ USB PD 1  USB PD3.0 （TID：3

IPLU300N04S4-R8 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating

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IQE013N04LM6CG MOSFET OptiMOSTM Power-MOSFET, 40 V Features • Optimized for synchronous rectification • Very low on-state resistance RDS(on) • 100% a

IPB017N10N5 MOSFET OptiMOSª 5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on)

BSC010NE2LS MOSFET OptiMOSTM Power-MOSFET, 25 V Features • Optimized for high performance Buck converter • Very low on-resistance RDS(on) @ VGS=4.5 V

BSC014N04LS MOSFET OptiMOSTM Power-MOSFET, 40 V Features • Optimized for synchronous rectification • Very low on-state resistance RDS(on) • 100% aval

IPT007N06N MOSFET OptiMOSTM Power-Transistor, 60 V Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according t

IPT012N08N5 MOSFET OptiMOSTM 5 Power-Transistor, 80 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on)

IPT008N06NM5LF MOSFET OptiMOSTM 5 Linear FET, 60 V Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf

Datasheet,Version 2.1, August 30, 2011 ® Never stop thinking. CoolSET® - Q1 ICE2QR2280Z Revision History: August 30, 2011 Previous Version: Page