isc N-Channel MOSFET Transistor FEATURES ·Drain .
FKI06190 - Power MOSFET
60 V, 30 A, 12.1 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI06190 Features V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID -----.FKI06190 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : R.