FKI10126 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=41A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance :

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100 V, 41 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI10126 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ------

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