FKV660S Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FKV660S FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Res

Rating: 1 ★ (6 votes)

MOS FET FKV660S Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings VDSS 60 VGSS +20, –10 ± 60 ID ± 180 ID(pulse) PD 60(Tc=25ºC) Tch 150 Tstg –40 to +1

Rating: 1 ★ (3 votes)