Eudyna Devices
FLL410IK-3C - L-Band High Power GaAs FET
L-Band High Power GaAs FET
FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=13.0dB(Typ.) ・High PAE: ηadd=52%(Typ.) ・Broad Band: 2.5~2.7G
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