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FLL410IK-3C

L-Band High Power GaAs FET

FLL410IK-3C Features

* High Output Power: Pout=46.0dBm(Typ.) High Gain: GL=13.0dB(Typ.) High PAE: ηadd=52%(Typ.) Broad Band: 2.5~2.7GHz Hermetically Sealed Package DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5

* 2.7 GHz band amplifiers. This new product is uniq

FLL410IK-3C General Description

The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5

* 2.7 GHz band amplifiers. This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s s.

FLL410IK-3C Datasheet (268.41 KB)

Preview of FLL410IK-3C PDF

Datasheet Details

Part number:

FLL410IK-3C

Manufacturer:

Eudyna Devices

File Size:

268.41 KB

Description:

L-band high power gaas fet.

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TAGS

FLL410IK-3C L-Band High Power GaAs FET Eudyna Devices

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