FLL410IK-3C Datasheet, Fet, Eudyna Devices

FLL410IK-3C Features

• Fet High Output Power: Pout=46.0dBm(Typ.) High Gain: GL=13.0dB(Typ.) High PAE: ηadd=52%(Typ.) Broad Band: 2.5~2.7GHz Hermetically Sealed Package DESCRIPTION The FLL410IK-3C is a partially m

PDF File Details

Part number:

FLL410IK-3C

Manufacturer:

Eudyna Devices

File Size:

268.41kb

Download:

📄 Datasheet

Description:

L-band high power gaas fet. The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5   – 2.7 GHz band amplifiers. Th

FLL410IK-3C Application

• Applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assura

TAGS

FLL410IK-3C

Eudyna Devices

📁 Related Datasheet

FLL410IK-4C - L-Band High Power GaAs FET (Fujitsu)
L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7G.

FLL400IK-2 - High Voltage - High Power GaAs FET (Eudyna Devices)
.. FLL400IK-2 High Voltage - High Power GaAs FET FEATURES •E High Output Power: P1dB=46.5dBm(Typ.) •E High Gain: G1dB=12.0dB(Typ.) •.

FLL400IK-2C - High Voltage - High Power GaAs FET (Eudyna Devices)
.. FLL400IK-2C High Voltage - High Power GaAs FET FEATURES •E High Output Power: P1dB=46.0dBm(Typ.) •E High Gain: G1dB=13.0dB(Typ.) .

FLL400IP-2 - L-Band Medium & High Power GaAs FET (Eudyna Devices)
FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Fre.

FLL400IP-3 - L-Band Medium & High Power GaAs FET (Eudyna Devices)
FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 43% (Typ.) Broad Fre.

FLL100 - Capacitor (FAAM)
FLL 100 Dimensions The Relationship for Open Circuit Voltage and Residual Capacity (25℃) Specifications Nominal Voltage Capacity(10Hr, 20℃) Length Wi.

FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET (Fujitsu)
.

FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET (Eudyna Devices)
FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47.

FLL120MK - L-Band Medium & High Power GaAs FET (Eudyna Devices)
FEATURES • High Output Power: P1dB = 40.0dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: ηadd = 40% (Typ.) • Proven Reliability • Hermeticall.

FLL177ME - L-BAND MEDIUM & HIGH POWER GAAS FET (Fujitsu)
.