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FLL400IK-2C

High Voltage - High Power GaAs FET

FLL400IK-2C Features

* E High Output Power: P1dB=46.0dBm(Typ.)

* E High Gain: G1dB=13.0dB(Typ.)

* E High PAE: ηadd=45%(Typ.)

* E Broad Band: 2.11~2.17GHz

* E Hermetically Sealed Package DESCRIPTION The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited for use in W-CDMA base st

FLL400IK-2C General Description

The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited for use in W-CDMA base station amplifier as long term reliability. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC) Item Symbol .

FLL400IK-2C Datasheet (81.07 KB)

Preview of FLL400IK-2C PDF

Datasheet Details

Part number:

FLL400IK-2C

Manufacturer:

Eudyna Devices

File Size:

81.07 KB

Description:

High voltage - high power gaas fet.

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TAGS

FLL400IK-2C High Voltage High Power GaAs FET Eudyna Devices

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