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FLL300IL-2

(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets

FLL300IL-2 Features

* High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are s

FLL300IL-2 General Description

The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for.

FLL300IL-2 Datasheet (154.18 KB)

Preview of FLL300IL-2 PDF

Datasheet Details

Part number:

FLL300IL-2

Manufacturer:

Fujitsu Microelectronics

File Size:

154.18 KB

Description:

(fll300il-1/-2/-3) l-band medium & high power gaas fets.

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TAGS

FLL300IL-2 FLL300IL-1 L-band Medium High Power GAAS Fets Fujitsu Microelectronics

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