FLL357ME Datasheet, Fets, Fujitsu Microelectronics

FLL357ME Features

• Fets
• High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed P

PDF File Details

Part number:

FLL357ME

Manufacturer:

Fujitsu Microelectronics

File Size:

132.29kb

Download:

📄 Datasheet

Description:

L-band medium & high power gaas fets. The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and e

FLL357ME Application

• Applications This device is assembled in hermetic metal/ceramic package. Fujitsu’s stringent Quality Assurance Program assures the highest reliabil

TAGS

FLL357ME

Fujitsu Microelectronics

📁 Related Datasheet

FLL351ME - L-band medium & high power gaas FTEs (Fujitsu Media Devices)
.

FLL300IL-1 - L-band Medium & High Power GAAS Fets (Fujitsu Microelectronics)
.. FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm (Typ..

FLL300IL-2 - (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets (Fujitsu Microelectronics)
.. FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm (Typ..

FLL300IL-3 - (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets (Fujitsu Microelectronics)
.. FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm (Typ..

FLL300IP-4 - L-band Medium & High Power GAAS Fets (Fujitsu Microelectronics)
.. FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% (Typ.) Broad Frequency Range: 3400 to 3600 MHz. Suitable for cl.

FLL100 - Capacitor (FAAM)
FLL 100 Dimensions The Relationship for Open Circuit Voltage and Residual Capacity (25℃) Specifications Nominal Voltage Capacity(10Hr, 20℃) Length Wi.

FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET (Fujitsu)
.

FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET (Eudyna Devices)
FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47.

FLL120MK - L-Band Medium & High Power GaAs FET (Eudyna Devices)
FEATURES • High Output Power: P1dB = 40.0dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: ηadd = 40% (Typ.) • Proven Reliability • Hermeticall.

FLL177ME - L-BAND MEDIUM & HIGH POWER GAAS FET (Fujitsu)
.