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FLL357ME

L-band Medium & High Power GAAS Fets

FLL357ME Features

* High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band

FLL357ME General Description

The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications..

FLL357ME Datasheet (132.29 KB)

Preview of FLL357ME PDF

Datasheet Details

Part number:

FLL357ME

Manufacturer:

Fujitsu Microelectronics

File Size:

132.29 KB

Description:

L-band medium & high power gaas fets.

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TAGS

FLL357ME L-band Medium High Power GAAS Fets Fujitsu Microelectronics

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