FLL357ME L-band Medium & High Power GAAS Fets

Fujitsu Microelectronics

Description

( DataSheet : www.DataSheet4U.com ) FLL357ME L-Band Medium & High Power GaAs FET .
The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superio.

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Datasheet Specifications

Part number: FLL357ME
Manufacturer: Fujitsu Microelectronics
File Size: 132.29 KB
Datasheet: FLL357ME_FujitsuMicroelectronics.pdf
Description: L-band Medium & High Power GAAS Fets

Applications

* This device is assembled in hermetic metal/ceramic package. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage T

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FLL357ME L-band Medium High Power GAAS Fets Fujitsu Microelectronics

Fujitsu Microelectronics FLL357ME-like datasheet