FLL357ME - L-band Medium & High Power GAAS Fets

Fujitsu Microelectronics

FLL357ME Datasheet Preview — Preview of FLL357ME PDF

Datasheet Details

Part number	FLL357ME
Manufacturer	Fuji ↗tsu Microelectronics
File Size	132.29 KB
Description	L-band Medium & High Power GAAS Fets
Datasheet	FLL357ME_FujitsuMicroelectronics.pdf

FLL357ME Product details

Description

The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

Features

High Output Power: P1dB=35.5dBm (Typ. ) High Gain: G1dB=11.5dB (Typ. ) High PAE: ηadd=46% (Typ. ) Proven Reliability Hermetically Sealed Package.

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Published: Apr 18, 2006 |