FLL200IB-1
Eudyna Devices
183.22kb
(fll200ib-1/-2/-3) l-band medium & high power gaas fet. The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies
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FLL200IB-2 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
(Eudyna Devices)
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.
FLL200IB-3 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
(Eudyna Devices)
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.
FLL200 - The Relationship for Open Circuit Voltage and Residual Capacity
(FAAM)
FLL200
Dimensions The Relationship for Open Circuit Voltage and Residual Capacity (25℃)
Charging Characteristics(25℃) Specifications
Nominal Voltage .
FLL21E004ME - High Voltage - High Power GaAs FET
(Eudyna Devices)
FLL21E004ME
FEATURES
・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm(typ.) at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Fre.
FLL21E010MK - High Voltage - High Power GaAs FET
(Eudyna Devices)
FLL21E010MK
FEATURES
High Voltage - High Power GaAs FET
・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm(typ.) at f=2.17GHz ・High Gain: G1.
FLL21E040IK - High Voltage - High Power GaAs FET
(Eudyna Devices)
FLL21E040IK
FEATURES
High Voltage - High Power GaAs FET
・High Voltage Operation : VDS=28V ・High Gain: 15dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequenc.
FLL21E045IY - High Power GaAs FET
(Eudyna Devices)
FLL21E045IY
L,S-band High Power GaAs FET
FEATURES
・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequ.
FLL21E060IY - High Power GaAs FET
(Eudyna Devices)
FLL21E060IY
L,S-band High Power GaAs FET
FEATURES
・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Fre.
FLL21E060IY - High Power GaAs FET
(Eudyna Devices)
FLL21E060IY
L,S-band High Power GaAs FET
FEATURES
・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Fre.
FLL21E090IK - High Voltage - High Power GaAs FET
(Eudyna Devices)
FLL21E090IK
FEATURES
High Voltage - High Power GaAs FET
・High Voltage Operation : VDS=28V ・High Gain: 15dB(typ.) at Pout=43dBm(Avg.) ・Broad Frequenc.