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FLL200IB-1

(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET

FLL200IB-1 Features

* High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are s

FLL200IB-1 General Description

The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for.

FLL200IB-1 Datasheet (183.22 KB)

Preview of FLL200IB-1 PDF

Datasheet Details

Part number:

FLL200IB-1

Manufacturer:

Eudyna Devices

File Size:

183.22 KB

Description:

(fll200ib-1/-2/-3) l-band medium & high power gaas fet.

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TAGS

FLL200IB-1 FLL200IB-1 L-Band Medium High Power GaAs FET Eudyna Devices

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