FLL200IB-1 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET

Eudyna Devices

FLL200IB-1 Datasheet Preview — Preview of FLL200IB-1 PDF

Datasheet Details

Part number	FLL200IB-1
Manufacturer	Eudyna Devices
File Size	183.22 KB
Description	(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
Datasheet	FLL200IB-1_EudynaDevices.pdf

FLL200IB-1 Product details

Description

The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

Features

High Output Power: P1dB = 42.5dBm (Typ. ) High Gain: G1dB = 13.0dB (Typ. )@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ. ) Proven Reliability Hermetically Sealed Package.

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Other Datasheets by Eudyna Devices

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Published: May 14, 2012 |