w w a D . w S a t e e h U 4 t m o .c w w .
Fujitsu
FLM5964-4F - C-Band Internally Matched FET
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .
SUMITOMO
FLM5964-4F - C-Band Internally Matched FET
FLM5964-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB =10.0dB (Typ.) • High PAE: hadd = 37% (.
SUMITOMO
FLM5964-4F-001 - Internally Matched High Power GaAs FETs
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Product Information FLM5964-4F/001 Part Number Class Outline / Package Code Frequency f (GHz) 2tone test lM.
Eudyna Devices
FLM5964-4F - C-Band Internally Matched FET
wEudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. Item Drain-Source Voltage Gate-Source Voltag.