w m C-Band Internally Matched FET o FEATURES .c .
Eudyna Devices
7
FLM5964-6F - C-Band Internally Matched FET
w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 38.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =.
Fujitsu
2
FLM5964-6F - C-Band Internally Matched FET
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .
SUMITOMO
1
FLM5964-6F - C-Band Internally Matched FET
FLM5964-6F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.5dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 37% .