FM120 Datasheet | Specifications & PDF Download

DFM1200AXM45-TS000 Fast Recovery Diode Module DS6132-1 October 2013 (LN31071) FEATURES  Low Reverse Recovery Charge  High Switching Speed  Low For

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IRFM120ATF-VB IRFM120ATF-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.100 at VGS = 10 V 100 0.1

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DFM1200AXM45-TS001 Fast Recovery Diode Module DS6146-1 April 2014 (LN31501) FEATURES  10.2kV Isolation Package  Low Reverse Recovery Charge  High

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Replaces DS5645-1.1 DFM1200FXS12-A000 Fast Recovery Diode Module DS5845-2 April 2010 (LN26743) FEATURES Low Reverse Recovery Charge High Switching S

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Chip Low Leakage Schottky Barrier Rectifier Formosa MS KLFM120-S THRU KLFM140-S List List

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere FM120 THRU FM1200 FEATURES * Low switching noise * Low for

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Chip Low Leakage Schottky Barrier Rectifier Formosa MS KLFM120-MH1 THRU KLFM140-MH1 List List

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DFM1200EXM12-A000 DFM1200EXM12-A000 Fast Recovery Diode Module Preliminary Information DS5481-1.2 July 2001 FEATURES s Low Reverse Recovery Charge s

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Advanced Power MOSFET IRFM120A FEATURES IEEE802.3af Compatible Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitanc

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DFM1200NXM33-A000 DFM1200NXM33-A000 Fast Recovery Diode Module Preliminary Information DS5472-1.3 October 2001 FEATURES s Low Reverse Recovery Charg

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Replaces DS5913-1.0 DFM1200EXM18-A000 Fast Recovery Diode Module DS5913-2 April 2011 (LN28313) FEATURES  Low Reverse Recovery Charge  High Switchi

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Replaces DS5851-1.2 DFM1200EXS12-A000 Fast Recovery Diode Module DS5851-2 August 2011 (LN28651) FEATURES  Low Reverse Recovery Charge  High Switch

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DFM1200FXM18-A000 DFM1200FXM18-A000 Fast Recovery Diode Module Preliminary Information DS5420-1.5 April 2001 FEATURES s Low Reverse Recovery Charge

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Advanced Power MOSFET FEATURES IRFM120A BVDSS = 100 V RDS(on) = 0.2 ID = 2.3 A SOT-223 2 IEEE802.3af Compatible Avalanche Rugged Technology R

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Chip Schottky Barrier Diodes FM120-M THRU FM1100-M Silicon epitaxial planer type Formosa MS SOD-123 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. Features

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Replaces DS5480-1.3 DFM1200FXM12-A000 Fast Recovery Diode Module DS5480-2 April 2010 (LN26760) FEATURES  Low Reverse Recovery Charge  High Switchi

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Chip Schottky Barrier Diodes FM120-M H THRU FM1100-M H Silicon epitaxial planer type Formosa MS 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Features Plas

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Replaces DS6129-1 DFM1200XXM45-TS001 Fast Recovery Diode Module DS6129-2 April 2014 (LN31496) FEATURES  10.2kV Isolation Package  Low Reverse Reco

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SHENZHEN FUMAN ELECTRONICS CO., LTD. FM1208S(：S&CIC1178)  MOS  、、   （1.0Ω）   SOP-16  2 NC 1 INA 2 INB 3 VDD 4 NC 5 INC 6

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere FM120 THRU FM1200 FEATURES * Low switching noise * Low for

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