FM180-N Datasheet | Specifications & PDF Download

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere FM120 THRU FM1200 FEATURES * Low switching noise * Low for

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Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. Features Plastic

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FM1808B 256-Kbit (32 K × 8) Bytewide F-RAM Memory 256-Kbit (32 K × 8) Bytewide F-RAM Memory Features ■ 256-Kbit ferroelectric random access memory (F

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www.DataSheet.co.kr Preliminary FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits

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w PRELIMINARY U 4 t e e SPECIFICATION PFM18030 h S MHz, 30W, 2-Stage Power Module 1805-1880 a Enhancement-Mode Lateral MOSFETs at .D This DCS module

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Chip Schottky Barrier Diodes FM120-S THRU FM1100-S Silicon epitaxial planer type Formosa MS SMA-S 0.205(5.2) 0.189(4.8) 0.012(0.3) Typ. Features Pl

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SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. FM1801 (：S&CIC1364) IC FM1801 （PSR）。 CV／CC ， TL431 。， BJT 、PFM ， ，。FM1801 ， BJT ，。 ¾ （OTP） ¾

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Chip Schottky Barrier Diodes FM120-M THRU FM1100-M Silicon epitaxial planer type Formosa MS SOD-123 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. Features

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FM120-N THRU FM1100-N CHIP SCHOTTKY BARRIER RECTIFIER 1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V SOD-323 0.106 (2.7) 0.091 (2.3) 0.012(

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Chip Schottky Barrier Diodes FM120-M H THRU FM1100-M H Silicon epitaxial planer type Formosa MS 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Features Plas

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SMD Schottky Barrier Rectifier Formosa MS FM120-MS THRU FM1200-MS List List

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