PFM18030 Datasheet | Cree Research

w PRELIMINARY U 4 t e e SPECIFICATION PFM18030 h S MHz, 30W, 2-Stage Power Module 1805-1880 a Enhancement-Mode Lateral MOSFETs at .D This DCS module provides excellent linearity and efficiency in a w versatile low-cost surface mount package. The PFM18030SM includes two stages Package Type: Surface Mount wof amplification, along with internal sense FETs that are on the same silicon die as the RF devices. These thermally coupled sense FETs simplify the task of bias temperature pensation of the overall amplifier. The module includes RF input, interstage, and output matching elements. The source and load impedances required for optimum operation of the module are much higher (and simpler to realize) than for unmatched Si LDMOS transistors of similar performance. The surface mount package base is typically soldered to a conventional PCB pad with an array of via holes for grounding and thermal sinking of the module. Optimized internal construction supports low FET channel temperature for reliable operation. PN: PFM18030SM m o .c - 29 dB Gain - 30 Watts Peak Output Power - Internal Tracking FETs (for improved bias control) Gate 1 RF IN Lead Sense S1 Gate 2 w w .D w Module Schematic Diagram Module Substrate Q2 Die Carrier Q2 Output Match Input Match Output Match t a Q1 S1 S a e h t e U 4 .c m o Package Type: Flange PN: PFM18030F - IS95 CDMA Performance 5 Watts Average Output Level 20% Power Added Efficiency - 49 dBc ACPR Q1 Die Carrier Input Match Drain 2 RF OUT Lead S2 Lead Lead Sense S2 Lead D1...