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U 4 t e e SPECIFICATION PFM19030 h S MHz, 30W, 2-Stage Power Module 1930-1990 a Enhancement-Mode Lateral MOSFETs at .D This PCS module provides excellent linearity and efficiency in a w versatile low-cost surface mount package. The PFM19030 includes two stages of wamplification, along with internal sense FETs that are on the same silicon
die as the RF devices. These thermally coupled sense FETs simplify the task of bias temperature compensation of the overall amplifier. The module includes RF input, interstage, and output matching elements. The source and load impedances required for optimum operation of the module are much higher (and simpler to realize) than for unmatched Si LDMOS transistors of similar performance.
PFM19030 Datasheet
