PFM21030 Datasheet | Cree Research

w t e e SPECIFICATION PFM21030 h S MHz, 30W, 2-Stage Power Module 2110-2170 a at Enhancement-Mode Lateral MOSFETs D . w versatile UMTS module provides excellent linearity and efficiency in wThis a low-cost surface mount package. The PFM21030 includes two stages 4U m o .c PRELIMINARY Package Type: Surface Mount PN: PFM21030SM of amplification, along with internal sense FETs that are on the same silicon die as the RF devices. These thermally coupled sense FETs simplify the task of bias temperature pensation of the overall amplifier. The module includes RF input, interstage, and output matching elements. The source and load impedances required for optimum operation of the module are much higher (and simpler to realize) than for unmatched Si LDMOS transistors of similar performance. The surface mount package base is typically soldered to a conventional PCB pad with an array of via holes for grounding and thermal sinking of the module. Optimized internal construction supports low FET channel temperature for reliable operation. - 27 dB Gain - 30 Watts Peak Output Power - Internal Tracking FETs (for improved bias control) Gate 1 RF IN w Lead Lead Lead Lead Lead w .D w Input Match S1 Module Schematic Diagram Module Substrate Q2 Die Carrier Q2 Output Match Input Match Output Match t a S a e h t e U 4 .c m o Package Type: Flange PN: PFM21030F - WCDMA Performance 5 Watts Average Output Level 18% Power Added Efficiency - 45 dBc ACPR Q1 Die Carrier Q1 Drain 2 RF OUT Lead S2 Sense S1 Gate 2 Sense S2 D1 Note: Additionally, there are 250K Ohm resistors connected in shunt with all leads, to enhance ESD protection. Page 1 of 13...